Deterministic Nucleation Enables Controlled Growth of 2D Semiconductors (KAIST, TDS, Hanyang et al.)
South Korean researchers achieve deterministic growth of 2D semiconductors using etching flux
Researchers at several South Korean academic institutions and TDS Innovation have introduced a method to direct the nucleation of two-dimensional semiconductors using etching flux. The approach establishes spatial control over where and when crystalline structures develop during the semiconductor deposition phase. This process provides an alternative route to conventional area-selective deposition methods for synthesising advanced 2D electronic materials.
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This summary was written by the GPU Data Hub desk from reporting published by Semiconductor Engineering on 12 Oct 2026, 22:25. Read the full article at the original publisher.
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