Micron plans to use wafer bonding and High-NA EUV for next-gen DRAM

Micron selects wafer bonding and High-NA EUV for upcoming memory generations.

By GPU Data Hub Desk · GPU Data Hub·Editorial standards·26 Oct 2026, 14:00·United States

Micron plans to use wafer bonding and High-NA EUV for next-gen DRAM

Micron Technology plans to deploy wafer bonding and High-NA extreme ultraviolet lithography in the production of its forthcoming dynamic random-access memory. The semiconductor manufacturer has rejected 4F2 cell designs as it prepares its process technology for the shift to three-dimensional architectures in the coming years.

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This summary was written by the GPU Data Hub desk from reporting published by Tom's Hardware on 26 Oct 2026, 14:00. Read the full article at the original publisher.

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